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FS450R12KE3/AGDR-71C ABB Control Circuit Board -40°C To 85°C 0 To 20VAC 50V

FS450R12KE3/AGDR-71C ABB Control Circuit Board -40°C To 85°C 0 To 20VAC 50V

Rincian produk:
Tempat asal: Jerman
Nama merek: ABB
Sertifikasi: CE
Nomor model: FS450R12KE3/AGDR-71C
Informasi Rinci
Tempat asal:
Jerman
Nama merek:
ABB
Sertifikasi:
CE
Nomor model:
FS450R12KE3/AGDR-71C
Tegangan Negara Bagian Off:
0 hingga 20VAC
Nilai tegangan isolasi:
50v
Seri:
3500
V DC:
24 V DC
Tegangan output yang dapat disesuaikan:
24...28,8V
Kisaran suhu penyimpanan:
-40°C hingga 85°C
Informasi Perdagangan
Kuantitas min Order:
1
Harga:
Dapat dinegosiasikan
Kemasan rincian:
Baru dan Asli
Waktu pengiriman:
5-7 hari
Syarat-syarat pembayaran:
T/T, L/C
Menyediakan kemampuan:
100
Deskripsi Produk

FS450R12KE3/AGDR-71C ABB Control Circuit Board -40°C To 85°C 0 To 20VAC 50V

 

FS450R12KE3/AGDR-71C Description

The ABB FS450R12KE3/AGDR-71C is a high-power, high-voltage IGBT (Insulated Gate Bipolar Transistor) module from the industry-leading HiPak family, representing a second-generation chip technology platform. It is a complete, isolated power switch integrating an IGBT and an anti-parallel diode in a half-bridge configuration within a single, rugged package. Rated for 1200V and 450A, it is engineered for demanding high-power conversion applications requiring high efficiency, robustness, and long-term reliability. The module features low-loss, high-speed IGBT chips and an advanced package with low-inductance design, making it a core component in industrial motor drives, renewable energy inverters, and traction systems.

FS450R12KE3/AGDR-71C  Features

  • Second Generation Trench Gate/Field Stop IGBTs:​ Incorporates ABB's advanced SPT+ (Soft Punch Through) or Trench technology, offering an optimal trade-off between low saturation voltage (VCE(sat)) and low switching losses, leading to higher system efficiency.
  • Rugged & Reliable HiPak Package:​ Features the proven HiPak package with a robust, isolated baseplate (providing electrical isolation up to several kV) and heavy-duty screw terminals for high-current, low-inductance power connections. The package is designed for excellent thermal cycling capability.
  • Low-Inductance Internal Design:​ Optimized internal layout and busbar structure minimize stray inductance, which is critical for reducing voltage overshoot during fast switching and improving overall system reliability.
  • Integrated NTC Temperature Sensor:​ Includes a Negative Temperature Coefficient (NTC) thermistor for accurate monitoring of the module's baseplate temperature, enabling advanced thermal management and protection.
  • Half-Bridge Configuration:​ Provides two IGBTs (each with a co-packaged anti-parallel diode) in a half-bridge topology, which is the fundamental building block for voltage source inverters (VSI).
  • High Operating Junction Temperature:​ Rated for a maximum junction temperature (Tvjop) of 150°C, allowing for high power density designs and reliable operation under demanding thermal conditions.

FS450R12KE3/AGDR-71C  Materials, Construction & Applications

  • Materials:​ The semiconductor chips are silicon-based IGBT and diode dies. The substrate is typically an AlN (Aluminum Nitride) or Al2O3(Alumina) ceramic layer bonded to a copper baseplate, providing electrical isolation and thermal conduction. The housing is a robust PPS (Polyphenylene Sulfide) plastic. Terminals are copper alloy.
  • Construction:​ A state-of-the-art power module with multiple IGBT and diode chips connected in parallel within the package. It uses advanced solder and bond wire technology for interconnection. The entire assembly is hermetically sealed with a silicone gel for protection against moisture and contaminants. The isolated baseplate allows for easy mounting to a common heatsink for multiple modules.
  • Primary Applications:
    • Industrial Medium Voltage Drives:​ As the main switching device in inverters for medium-voltage AC motors (often used in multi-level topologies like NPC).
    • Renewable Energy:​ Central inverters for solar farms and wind turbine converters.
    • Traction:​ Drives for electric and hybrid-electric buses, trams, and locomotives.
    • Power Supplies:​ High-power, high-frequency switch-mode power supplies (SMPS) and UPS systems.
    • Industrial Heating & Welding:​ Induction heating and welding power sources.

FS450R12KE3/AGDR-71C  Key Specifications

Parameter
Specification
Product Order Code​
FS450R12KE3/AGDR-71C
Module Type​
Dual / Half-Bridge (2-in-1)
Rated Voltage (VCES)​
1200 V
Nominal Current (IC@ Tcase=80°C)​
450 A
Maximum Current (ICM)​
900 A
Collector-Emitter Saturation Voltage (VCE(sat))​
~ 1.85 V (Typical, at rated current)
Switching Characteristics​
Low switching losses (Eon, Eoff) tailored for frequencies typically up to a few kHz.
Integrated Diode​
Anti-parallel Emitter Controlled Diode (Emcon) with soft recovery characteristics.
Maximum Junction Temperature (Tvj)​
150 °C (Operating), 175 °C (Storage)
Isolation Voltage (Visols)​
3600 Vrms/ 50 Hz / 1 min (Baseplate to terminals)
Thermal Resistance, Junction-to-Case (Rth(j-c))​
IGBT: ~0.027 K/W (per switch)
Diode: ~0.045 K/W (per diode)
Gate-Emitter Voltage (VGE)​
±20 V (Recommended: typically +15V/-15V)
Internal Temperature Sensor​
NTC Thermistor (e.g., 5 kΩ at 25°C)
Mounting Torque (Terminal Screws)​
Typically 4.5 Nm
Weight​
Approximately 320 g
Module Technology​
SPT+ / Trench IGBT (2nd Generation)
Housing​
HiPak Standard (62mm x 140mm footprint)
Mounting​
Screw mounting to heatsink with thermal paste.
 
 

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FS450R12KE3/AGDR-71C ABB Control Circuit Board -40°C To 85°C 0 To 20VAC 50V 0